NSN 5961-01-079-1482
Part Details | TRANSISTOR
5961-01-079-1482 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6384, 1662422, 166242-2, 1662422, 166242-2, 5961-01-079-1482, 01-079-1482, 5961010791482, 010791482
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 27, 1979 | 01-079-1482 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-079-1482
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6384 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 166242-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 166242-2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-079-1482
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DOUBLE BASE |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBM60.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAB250.00 MILLIAMPERES NOMINAL AND BACAC10.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAB100.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.450 INCHES NOMINAL |
| OVERALL DIAMETER | 0.875 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |