NSN 5961-01-080-2058
Part Details | TRANSISTOR
5961-01-080-2058 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: HXTR6104, 35866EOPTH70, HXTR6104, P27251, P2725-1, 5961-01-080-2058, 01-080-2058, 5961010802058, 010802058
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 21, 1979 | 01-080-2058 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-080-2058
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| HXTR6104 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 35866EOPTH70 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| HXTR6104 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| P2725-1 | 01341 | MICROPHASE CORPORATION |
Technical Data | NSN 5961-01-080-2058
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM20.0 MAXIMUM AND CA+15.0 MAXIMUM AND CBA1.5 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC20.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 PIN |
| OVERALL LENGTH | 0.050 INCHES NOMINAL |
| OVERALL DIAMETER | 0.009 INCHES MINIMUM AND 0.011 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 01341-P2725 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |