NSN 5961-01-081-0241
Part Details | TRANSISTOR
5961-01-081-0241 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6045TINLEAD, 2N6045TIN/LEAD, 2N6045, 2N6045, 21813, 5961-01-081-0241, 01-081-0241, 5961010810241, 010810241
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 07, 1979 | 01-081-0241 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-081-0241
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6045TIN/LEAD | 55464 | CENTRAL SEMICONDUCTOR CORP. |
| 2N6045 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N6045 | 1MQ07 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
| 21813 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
Technical Data | NSN 5961-01-081-0241
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB80.0 MAXIMUM AND CAC80.0 MAXIMUM AND CBM5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAB120.00 MILLIAMPERES NOMINAL AND AACAC8.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG2.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 0.633 INCHES MINIMUM AND 0.643 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM |
| OVERALL WIDTH | 0.495 INCHES MINIMUM AND 0.503 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |