NSN 5961-01-081-3863
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-081-3863 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JAN1N967B, 9595266, 959526-6, JAN1N967B, MILS19500117, MIL-S-19500/117, MILPRF19500117, MIL-PRF-19500/117, JAN1N967B1, JAN1N967B-1, JAN1N967B, JANTX1N967B1, JANTX1N967B-1, JANTX1N967B, JANTX1N967A1, JANTX1N967A-1, JAN1N967B, 917AS70018, 917AS700-18, 418036130, 418036-130, JAN1N967B, 5961-01-081-3863, 01-081-3863, 5961010813863, 010813863
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 12, 1979 | 01-081-3863 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-081-3863
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN1N967B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 959526-6 | 94580 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| JAN1N967B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| MIL-S-19500/117 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/117 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N967B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N967B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N967B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N967B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N967A-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N967B | 99942 | N A P SMD TECHNOLOGY INC |
| 917AS700-18 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| 418036-130 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| JAN1N967B | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-081-3863
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET18.9 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAS21.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 117 GOVERNMENT SPECIFICATION |