NSN 5961-01-084-2583
Part Details | TRANSISTOR
5961-01-084-2583 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 207079P1, FS3411001003H, FS341-1001-003H, 2139943G001, C106661, C10666-1, MILS19500547, MIL-S-19500/547, MILPRF19500547, MIL-PRF-19500/547, JAN2N6660, JANTX2N6660, 167568, 2N6660750, 2N6660-750, 2N6660, VN66AK, VA1050, A31678972, A3167897-2, 5961-01-084-2583, 01-084-2583, 5961010842583, 010842583
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 13, 1979 | 01-084-2583 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-084-2583
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 207079P1 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| FS341-1001-003H | K3902 | BAE SYSTEMS MARITIME SERVICES |
| 2139943G001 | 28527 | HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, INTEGRATED |
| C10666-1 | 81755 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN AERONAUTICS |
| MIL-S-19500/547 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/547 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N6660 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX2N6660 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 167568 | 21877 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NAVAL AND MARINE SYSTEMS |
| 2N6660-750 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 2N6660 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| VN66AK | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| VA1050 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| A3167897-2 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-01-084-2583
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX60.0 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCY3.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF6.25 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-205AD |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 547 GOVERNMENT SPECIFICATION |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE OPTION GOLD |