NSN 5961-01-085-8223
Part Details | TRANSISTOR
5961-01-085-8223 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 82063B, 10258, SD213, SD213, 5961-01-085-8223, 01-085-8223, 5961010858223, 010858223
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 16, 1979 | 01-085-8223 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-085-8223
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 82063B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 10258 | 6Y424 | HARRIS CORPORATIONDIV MICROWAVE COMMUNICATION DIVISION |
| SD213 | 18324 | PHILIPS SEMICONDUCTORS INC |
| SD213 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-01-085-8223
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX10.0 MAXIMUM AND C15.0 MAXIMUM AND CDTM15.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |