NSN 5961-01-087-5890
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-087-5890 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1312375841, 13-1237584-1, 1312375841, 13-1237584-1, 1312375841, 13-1237584-1, 5961-01-087-5890, 01-087-5890, 5961010875890, 010875890
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 19, 1979 | 01-087-5890 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-087-5890
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 13-1237584-1 | 21847 | FEI MICROWAVE INC |
| 13-1237584-1 | 07397 | GENERAL DYNAMICS ADVANCEDINFORMATION SYSTEMS INC. |
| 13-1237584-1 | 54893 | HEWLETT-PACKARD CO COMMUNICATIONSCOMPONENTS/AVANTEK DIV |
Technical Data | NSN 5961-01-087-5890
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDF35.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACCH10.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAD1.4 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| MOUNTING METHOD | CLIP |
| TERMINAL TYPE AND QUANTITY | 2 FERRULE |
| OVERALL LENGTH | 0.224 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.123 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | INTERNAL SURFACES GOLD |