NSN 5961-01-088-0895

Part Details | TRANSISTOR

5961-01-088-0895 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 93196102001, 9319-6102-001, 2N6354, RELEASE6381, 2N6354, 2N6354, 2N6354, 2N6354, 1687411, 168741-1, 5961-01-088-0895, 01-088-0895, 5961010880895, 010880895

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 05, 198001-088-089520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-088-0895
Part Number Cage Code Manufacturer
9319-6102-001K0656BAE SYSTEMS (OPERATIONS) LIMITEDDBA BAE SYSTEMS PLC
2N635480131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE638180131ELECTRONIC INDUSTRIES ASSOCIATION
2N635424444GENERAL SEMICONDUCTOR INDUSTRIES INC
2N63541MY79INTERSIL COMMUNICATIONS INC.
2N635434371INTERSIL CORPORATIONDIV NA
2N635412969MICRO USPD INC
168741-13B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-088-0895
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAB150.0 MAXIMUM AND CBM6.0 MAXIMUM AND CAC130.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACAC10.00 AMPERES NOMINAL AND AACAB5.00 AMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAB80.0 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN200.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-3
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.450 INCHES MAXIMUM
OVERALL DIAMETER0.875 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN