NSN 5961-01-088-4108
Part Details | TRANSISTOR
5961-01-088-4108 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N2606, RELEASE4090, JANTX2N2606, 2N2606, JAN2N2606, 5961-01-088-4108, 01-088-4108, 5961010884108, 010884108
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 12, 1980 | 01-088-4108 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-088-4108
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N2606 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE4090 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| JANTX2N2606 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N2606 | 15818 | TELCOM SEMICONDUCTOR INC |
| JAN2N2606 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-01-088-4108
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAJ30.0 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.195 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE4090 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |