NSN 5961-01-088-8346
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-088-8346 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 220034, 200441126, 200441-126, 1N960B, 26013100, 2601-3100, 1N757A, RELEASE2959, 1N960B, 1N960B, 1N960B, 1N757D, 1N960B, 1N960B, 5E4820511015, 5E4820/51-1015, 1N960A, 1N960B, 1N960B, JANTX1N757A1, JANTX1N757A, SV9, 490792314, 4907923-14, 1N960B, 1N960B, MIS1983664, MIS-19836/64, 1N960B, MILS19500127, MIL-S-19500/127, MILPRF19500127, MIL-PRF-19500/127, JAN1N757A1, JAN1N757A-1, JAN1N757A, JANTX1N757A1, JANTX1N757A-1, 642AS42236, 642AS4223-6, DR017000, 6191361, 619136-1, 41871563, 418715-63, 566573, 1N960B, 1N960B, CD32123, 1N960B, E233, E-233, MIS1983664, MIS-19836/64, 5961-01-088-8346, 01-088-8346, 5961010888346, 010888346
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 21, 1980 | 01-088-8346 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-088-8346
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 220034 | 21793 | ASTRONICS TEST SYSTEMS INC. |
| 200441-126 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 1N960B | 08527 | CHAMPION AVIATION INCDEVILBISS CO MEDICAL PRODUCT DIV |
| 2601-3100 | 30669 | E AND R ELECTRONICS INCDBA DUMONT OSCILLOSCOPE |
| 1N757A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2959 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N960B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N960B | 20950 | ESPEY MFG. & ELECTRONICS CORP. |
| 1N960B | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 1N757D | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N960B | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| 1N960B | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 5E4820/51-1015 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
| 1N960A | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 1N960B | 16068 | INTERNATIONAL DIODE CORP |
| 1N960B | 07421 | INTERSTATE ELECTRONICS CORPORATIONDBA L-3 INTERSTATE ELECTRONICS |
| JANTX1N757A1 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| JANTX1N757A | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| SV9 | 28199 | L3 TECHNOLOGIES, INC.DBA L3 HENSCHEL |
| 4907923-14 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 1N960B | 12969 | MICRO USPD INC |
| 1N960B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| MIS-19836/64 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N960B | 14552 | MICROSEMI CORPORATION |
| MIL-S-19500/127 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/127 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N757A-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N757A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N757A-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 642AS4223-6 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| DR017000 | 23934 | POWER/MATE CO |
| 619136-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| 418715-63 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 566573 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 1N960B | 31338 | SEMITRONICS CORP |
| 1N960B | 21845 | SOLITRON DEVICES, INC. |
| CD32123 | 15818 | TELCOM SEMICONDUCTOR INC |
| 1N960B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| E-233 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| MIS-19836/64 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-088-8346
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET9.1 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | BACEA45.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 127 GOVERNMENT SPECIFICATION |