NSN 5961-01-089-0780
Part Details | TRANSISTOR
5961-01-089-0780 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: VA1006, 151110800, 151-1108-00, 5961-01-089-0780, 01-089-0780, 5961010890780, 010890780
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 25, 1980 | 01-089-0780 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-089-0780
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VA1006 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 151-1108-00 | 80009 | TEKTRONIX, INC.DBA TEKTRONIX |
Technical Data | NSN 5961-01-089-0780
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX90.0 MAXIMUM AND CAW90.0 MAXIMUM AND C0.0 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD2.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG8.3 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |