NSN 5961-01-089-2200
Part Details | TRANSISTOR
5961-01-089-2200 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5786, RELEASE6015, 2N5786, 5961-01-089-2200, 01-089-2200, 5961010892200, 010892200
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 28, 1980 | 01-089-2200 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-089-2200
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5786 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6015 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5786 | 34371 | INTERSIL CORPORATIONDIV NA |
Technical Data | NSN 5961-01-089-2200
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB45.0 MAXIMUM AND CBM3.5 MAXIMUM AND CAC45.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC3.50 AMPERES NOMINAL AND AACAB1.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAB10.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |