NSN 5961-01-092-3055
Part Details | TRANSISTOR
5961-01-092-3055 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 4300490000, HXTR2101, HXTR-2101, HXTR2101, HXTR-2101, 5961-01-092-3055, 01-092-3055, 5961010923055, 010923055
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 22, 1980 | 01-092-3055 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-092-3055
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4300490000 | F4635 | AEROFLEX FRANCE |
| HXTR-2101 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| HXTR-2101 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
Technical Data | NSN 5961-01-092-3055
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM25.0 MAXIMUM AND CA+16.0 MAXIMUM AND CBA1.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC35.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF450.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.050 INCHES NOMINAL |
| OVERALL DIAMETER | 0.100 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |