NSN 5961-01-094-0469
Part Details | TRANSISTOR
5961-01-094-0469 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MILS19500518, MIL-S-19500/518, MILPRF19500518, MIL-PRF-19500/518, JAN2N3766, 5961-01-094-0469, 01-094-0469, 5961010940469, 010940469
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 30, 1980 | 01-094-0469 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-094-0469
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MIL-S-19500/518 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/518 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N3766 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-094-0469
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBA6.0 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | ATCAF25.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL DIAMETER | 0.470 INCHES MINIMUM AND 0.500 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |