NSN 5961-01-094-2068
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-094-2068 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MB8124, DZ731017B, MB8124, 72067072, 720670-72, 5961-01-094-2068, 01-094-2068, 5961010942068, 010942068
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 06, 1980 | 01-094-2068 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-094-2068
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MB8124 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| DZ731017B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| MB8124 | 14552 | MICROSEMI CORPORATION |
| 720670-72 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-094-2068
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET11.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | CKCAS200.00 MICROAMPERES |
| POWER RATING PER CHARACTERISTIC | ATCAF500.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | D0-7 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.125 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |