NSN 5961-01-095-1213
Part Details | TRANSISTOR
5961-01-095-1213 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 616494901, 616494-901, 5961-01-095-1213, 01-095-1213, 5961010951213, 010951213
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 22, 1980 | 01-095-1213 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-095-1213
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 616494-901 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-095-1213
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CA+60.0 MAXIMUM AND CAL60.0 MAXIMUM AND CAY5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC8.00 MILLIAMPERES NOMINAL AND BACAB50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF75.0 WATTS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.266 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.700 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND BURN IN |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |