NSN 5961-01-095-6567
Part Details | TRANSISTOR
5961-01-095-6567 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 9288682B, 928868-2B, STH1372, 5961-01-095-6567, 01-095-6567, 5961010956567, 010956567
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 05, 1980 | 01-095-6567 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-095-6567
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 928868-2B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| STH1372 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
Technical Data | NSN 5961-01-095-6567
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CA+90.0 MAXIMUM AND CAL90.0 MAXIMUM AND CAY5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC20.00 AMPERES NOMINAL AND AACAB0.50 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF150.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 0.330 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | EXTERNAL SURFACES GOLD |