NSN 5961-01-095-7736
Part Details | TRANSISTOR
5961-01-095-7736 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 9281761B, 928176-1B, FN2580, F2505, U2437, 5961-01-095-7736, 01-095-7736, 5961010957736, 010957736
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 05, 1980 | 01-095-7736 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-095-7736
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 928176-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| FN2580 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| F2505 | 21845 | SOLITRON DEVICES, INC. |
| U2437 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-01-095-7736
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX40.0 MAXIMUM AND CAW40.0 MAXIMUM AND C40.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAB0.5 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.110 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.195 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |