NSN 5961-01-096-7853
Part Details | TRANSISTOR
5961-01-096-7853 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 40437630802, 4043763-0802, 40428790702, 4042879-0702, 60059A, 5961-01-096-7853, 01-096-7853, 5961010967853, 010967853
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 28, 1980 | 01-096-7853 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-096-7853
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4043763-0802 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
| 4042879-0702 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
| 60059A | 50155 | VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV |
Technical Data | NSN 5961-01-096-7853
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAR50.0 MAXIMUM AND CBA3.5 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | ATCAG75.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | BASE |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 RIBBON AND 1 CASE |
| OVERALL LENGTH | 0.800 INCHES NOMINAL |
| OVERALL HEIGHT | 0.225 INCHES NOMINAL |
| OVERALL WIDTH | 0.425 INCHES NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 06845-4042879 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |