NSN 5961-01-099-1075
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-099-1075 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JAN1N458 SELECTED, JAN1N458 SELECTED, JAN1N458 SELECTED, P1950013901, P19500-139-01, 5961-01-099-1075, 01-099-1075, 5961010991075, 010991075
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 13, 1980 | 01-099-1075 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-099-1075
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN1N458 SELECTED | 14936 | GENERAL SEMICONDUCTOR INC |
| JAN1N458 SELECTED | 12969 | MICRO USPD INC |
| JAN1N458 SELECTED | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| P19500-139-01 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-099-1075
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CED150.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF7.00 MILLIAMPERES NOMINAL |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.105 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |