NSN 5961-01-099-4160
Part Details | TRANSISTOR
5961-01-099-4160 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RS2603, JAN2N706, SMB449099, SM-B-449099, 449099, SMB449099, SM-B-449099, SMB449099, SM-B-449099, 5961-01-099-4160, 01-099-4160, 5961010994160, 010994160
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 19, 1980 | 01-099-4160 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-099-4160
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RS2603 | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
| JAN2N706 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| SM-B-449099 | 31338 | SEMITRONICS CORP |
| 449099 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| SM-B-449099 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| SM-B-449099 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-01-099-4160
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBS5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACBE0.50 MILLIAMPERES NOMINAL |
| TRANSFER RATIO | BAK45.0 MINIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.750 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |