NSN 5961-01-099-8275
Part Details | TRANSISTOR
5961-01-099-8275 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 01019658001, 010-19658-001, 01019658001, 010-19658-001, MJ13090, MJ-13090, 2N667568896, 2N6675/68896, 5961-01-099-8275, 01-099-8275, 5961010998275, 010998275
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 24, 1980 | 01-099-8275 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-099-8275
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 010-19658-001 | 08742 | ASTEC AMERICA INC. |
| 010-19658-001 | 24429 | ASTEC AMERICA INCPOWERTEC POWER SUPPLIES DIV |
| MJ-13090 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N6675/68896 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
Technical Data | NSN 5961-01-099-8275
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A00.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AACBE15.00 AMPERES NOMINAL AND BACBF1.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG175.0 WATTS |
| TRANSFER RATIO | BAK8.0 MINIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL AND GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-204AA |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 38.69 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 11.4 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 26.66 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |