NSN 5961-01-099-8429
Part Details | TRANSISTOR
5961-01-099-8429 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IRF150, IRF150, IRF150, UFN150, IRF150, IRF150, 99130294, 5961-01-099-8429, 01-099-8429, 5961010998429, 010998429
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 24, 1980 | 01-099-8429 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-099-8429
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IRF150 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| IRF150 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| IRF150 | 59993 | INTERNATIONAL RECTIFIER CORPORATIONUse CAGE Code 81483 for cataloging |
| UFN150 | 12969 | MICRO USPD INC |
| IRF150 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| IRF150 | 66958 | STMICROELECTRONICS INC |
| 99130294 | F6481 | THALES SA |
Technical Data | NSN 5961-01-099-8429
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX100.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD30.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG180.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-204AE |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 39.22 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 8.38 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 25.80 MILLIMETERS MAXIMUM |