NSN 5961-01-103-9699
Part Details | TRANSISTOR
5961-01-103-9699 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6657, 2N6657, 2N6657, 5961-01-103-9699, 01-103-9699, 5961011039699, 011039699
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 23, 1980 | 01-103-9699 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-103-9699
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6657 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N6657 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 2N6657 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-01-103-9699
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAG60.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACBR2.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG25.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZM150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 1.534 INCHES NOMINAL |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES NOMINAL |