NSN 5961-01-104-8309
Part Details | TRANSISTOR
5961-01-104-8309 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 200037, 200003, 5961-01-104-8309, 01-104-8309, 5961011048309, 011048309
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 12, 1980 | 01-104-8309 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-104-8309
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 200037 | 26310 | ARNOUX CORPDYNAMIC SYSTEM ELECTRONICS DIV |
| 200003 | 26310 | ARNOUX CORPDYNAMIC SYSTEM ELECTRONICS DIV |
Technical Data | NSN 5961-01-104-8309
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB60.0 MAXIMUM AND CAC40.0 MAXIMUM AND CBM6.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC200.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB350.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| SPECIAL FEATURES | SLECTED 2N3904 JEDEC DWG TYPE TRANSISTOR; LOW LEAKAGE 0.5 NANO AMP; JUNCTION PATTERN ARRANGEMENT: NPN |