NSN 5961-01-105-3650

Part Details | TRANSISTOR

5961-01-105-3650 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 842SO213, 842-SO2-13, 477729, SD213EE, SD213DE, 401444404, 4014444-04, SD213DE, DM1106, SDF9213, SD213DE, 5961-01-105-3650, 01-105-3650, 5961011053650, 011053650

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 20, 198001-105-365020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-105-3650
Part Number Cage Code Manufacturer
842-SO2-1325965AMETEK PROGRAMMABLE POWER, INC.DBA AMETEK PROGRAMMABLE POWER
47772989536FLUKE CORPORATION
SD213EE18324PHILIPS SEMICONDUCTORS INC
SD213DE18324PHILIPS SEMICONDUCTORS INC
4014444-0436378RAYTHEON TECHNICAL SERVICES COMPANY
SD213DE17856SILICONIX INCORPORATEDDIV SILICONIX
DM110617856SILICONIX INCORPORATEDDIV SILICONIX
SDF921321845SOLITRON DEVICES, INC.
SD213DE0ANF0TOPAZ SEMICONDUCTOR INCSUB OF HYTEK MICROSYSTEMS INC
Technical Data | NSN 5961-01-105-3650
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAX30.0 MAXIMUM AND C0.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAD50.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAF1.2 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZL125.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-72
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE