NSN 5961-01-105-8233
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-105-8233 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS CASE 85002B, DMS CASE 85-002B, C122F5, 5961-01-105-8233, 01-105-8233, 5961011058233, 011058233
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 05, 1981 | 01-105-8233 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-105-8233
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS CASE 85-002B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| C122F5 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
Technical Data | NSN 5961-01-105-8233
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBG50.0 MAXIMUM AND CBF75.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACDQ8.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAE0.5 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.390 INCHES MINIMUM AND 0.420 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.325 INCHES MINIMUM AND 0.355 INCHES MAXIMUM |