NSN 5961-01-107-0705
Part Details | TRANSISTOR
5961-01-107-0705 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 8083821, 808382-1, 8083821, 808382-1, 8083821, 808382-1, 2N6661, 5961-01-107-0705, 01-107-0705, 5961011070705, 011070705
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 30, 1981 | 01-107-0705 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-107-0705
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 808382-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 808382-1 | 14099 | SEMTECH CORPORATION |
| 808382-1 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 2N6661 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-107-0705
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW90.0 MAXIMUM AND C5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD2.00 AMPERES NOMINAL AND BACBS2.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG8.3 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |