NSN 5961-01-107-5299
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-107-5299 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N829, SZ1173002, SZ11730-02, JAN1N829, 1N829, 790218102, 7902181-02, JANIN829, 1N829, DT940615A, 1N829, TX1N829, MILS19500159, MIL-S-19500/159, MILPRF19500159, MIL-PRF-19500/159, JAN1N8291, JAN1N829-1, JANTX1N8291, JANTX1N829-1, IN829, 1N829, 1N829, 7206028, 720602-8, 229107091, 229-10709-1, 232160, 5961-01-107-5299, 01-107-5299, 5961011075299, 011075299
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 07, 1981 | 01-107-5299 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-107-5299
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N829 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SZ11730-02 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| JAN1N829 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N829 | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| 7902181-02 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| JANIN829 | 58880 | MEGGITT (NEW HAMPSHIRE), INC |
| 1N829 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| DT940615A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N829 | 14552 | MICROSEMI CORPORATION |
| TX1N829 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/159 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/159 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N829-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N829-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| IN829 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1N829 | 0U8A3 | PROTEK DEVICES LPDBA PROTEK DEVICES |
| 1N829 | U3635 | PULSAR DEVELOPMENTS LTD |
| 720602-8 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 229-10709-1 | 81205 | THE BOEING COMPANYDBA BOEING |
| 232160 | 66503 | WOODWARD, INC.DBA WOODWARD |
Technical Data | NSN 5961-01-107-5299
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET6.2 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | BACEA70.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF500.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | VOLTAGE REFERENCE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 159 GOVERNMENT SPECIFICATION |