NSN 5961-01-108-6912
Part Details | TRANSISTOR
5961-01-108-6912 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5917, AL4558413, 933201390000, 9332-013-90000, 5961-01-108-6912, 01-108-6912, 5961011086912, 011086912
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 03, 1981 | 01-108-6912 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-108-6912
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5917 | 34371 | INTERSIL CORPORATIONDIV NA |
| AL4558413 | D0894 | ROHDE & SCHWARZ GMBH & CO. KG |
| 9332-013-90000 | F6170 | THALES OPTRONIQUE SAS |
Technical Data | NSN 5961-01-108-6912
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| POWER RATING PER CHARACTERISTIC | ATCAF4.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.265 INCHES MINIMUM AND 0.290 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.305 INCHES MINIMUM AND 0.320 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |