NSN 5961-01-109-2402
Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-01-109-2402 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: JAN4692, JAN469-2, L02862, JAN4692, JAN469-2, 07.342.6107, TXM1950046902, TXM19500/469-02, 1950046902, 19500/469-02, M195004692, M19500/469-2, M1950046902, M19500-469-02, MILS19500469, MIL-S-19500/469, MILPRF19500469, MIL-PRF-19500/469, JANTX4692, JANTX469-2, JANTXM1950046902, JANTXM19500/469-02, JANM1950046902, JANM19500/469-02, 8082972, 808297-2, TXM1950046902, TXM19500/469-02, 5961-01-109-2402, 01-109-2402, 5961011092402, 011092402
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 12, 1981 | 01-109-2402 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 1 PHASE
Cross Reference | NSN 5961-01-109-2402
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN469-2 | 04719 | AUTO-SOLER BOSTITCHDIV OF TEXTRON INC |
| L02862 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| JAN469-2 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 07.342.6107 | S3140 | I.M.I. LTD |
| TXM19500/469-02 | 12969 | MICRO USPD INC |
| 19500/469-02 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M19500/469-2 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M19500-469-02 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/469 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/469 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX469-2 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTXM19500/469-02 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANM19500/469-02 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 808297-2 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| TXM19500/469-02 | 13409 | RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR |
Technical Data | NSN 5961-01-109-2402
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | ACF100.00 AMPERES |
| MOUNTING METHOD | UNTHREADED HOLE |
| TERMINAL TYPE AND QUANTITY | 4 TURRET |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 1 PHASE |
| OPERATING TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| OVERALL LENGTH | 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM |
| OVERALL WIDTH | 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.570 INCHES MAXIMUM |
| SPECIAL FEATURES | ELECTROSTATIC DISCHARGE SENSITIVE |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 469 GOVERNMENT SPECIFICATION |