NSN 5961-01-109-8523
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-109-8523 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 50603204, 5060-3204, SC260N6X292, 50603204, 5060-3204, 18840269, 1884-0269, 5961-01-109-8523, 01-109-8523, 5961011098523, 011098523
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 22, 1981 | 01-109-8523 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-109-8523
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5060-3204 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| SC260N6X292 | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 5060-3204 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1884-0269 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
Technical Data | NSN 5961-01-109-8523
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CD+600.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACDS25.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAE10.0 WATTS |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |