NSN 5961-01-110-0668

Part Details | TRANSISTOR

5961-01-110-0668 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 405712, NE02135C, NE02135, NE0-2135, 405712, 2139774G001, 4112526, 411-2526, NE02135, 3006147, 1625170000, 162517-0000, SMC939720, SM-C-939720, 5961-01-110-0668, 01-110-0668, 5961011100668, 011100668

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 25, 198101-110-066820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-110-0668
Part Number Cage Code Manufacturer
40571220284AIMTRON SYSTEMS LLCDBA TARGET
NE02135C62104CALIFORNIA EASTERN LABS
NE0-213512909CARDION INC
40571212909CARDION INC
2139774G00128527HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, INTEGRATED
411-2526A486GNIMIKKEISTOKESKUS NCB FINLAND
NE02135S0545NIPPON ELECTRIC COMPANY LTD - NEC
3006147D0894ROHDE & SCHWARZ GMBH & CO. KG
162517-000064415SELEX ES INC.
SM-C-93972080063US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS
Technical Data | NSN 5961-01-110-0668
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCA+12.0 MAXIMUM AND CBA3.0 MAXIMUM AND CAM25.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAC70.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICBZCAF290.0 MILLIWATTS
TRANSFER RATIOCAK250.0 MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN200.0 DEG CELSIUS
INCLOSURE MATERIAL CERAMIC
MOUNTING METHOD PRESS FIT
TERMINAL TYPE AND QUANTITY4 RIBBON
OVERALL LENGTH1.8 MILLIMETERS MAXIMUM
OVERALL DIAMETER2.1 MILLIMETERS NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE