NSN 5961-01-110-3366
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-110-3366 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 100463001, 1004630-01, 100463001, 1004630-01, TIC226B, 5961-01-110-3366, 01-110-3366, 5961011103366, 011103366
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 28, 1981 | 01-110-3366 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-110-3366
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1004630-01 | 1PQF4 | L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING |
| 1004630-01 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
| TIC226B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-110-3366
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CD+200.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACDW70.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAE2.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZM110.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 0.420 INCHES NOMINAL |
| OVERALL HEIGHT | 0.190 INCHES NOMINAL |
| OVERALL WIDTH | 0.375 INCHES NOMINAL |