NSN 5961-01-111-5660

Part Details | TRANSISTOR

5961-01-111-5660 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5093, RELEASE5587, 2N5093, 2N5093, 72308814, 723088-14, 2N5093, 2N5093, 5961-01-111-5660, 01-111-5660, 5961011115660, 011115660

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 19, 198101-111-566020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-111-5660
Part Number Cage Code Manufacturer
2N509380131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE558780131ELECTRONIC INDUSTRIES ASSOCIATION
2N50931LU13GENESIS TECHNOLOGY INTERNATIONAL INCDBA GENESIS TECHNOLOGY
2N509364039HYBRID SEMICONDUCTORS & ELECTRONICSINC
723088-1405869RAYTHEON COMPANYDBA RAYTHEON
2N509307256SILICON TRANSISTOR CORPSUB OF BBF INC
2N509330043SOLID STATE DEVICES, INC.
Technical Data | NSN 5961-01-111-5660
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAY6.0 MAXIMUM AND CAM400.0 MAXIMUM AND CAD400.0 MAXIMUM AND CAC350.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACAC1.00 AMPERES NOMINAL AND AACAB0.50 AMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAG2.0 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZL175.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-5
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP