NSN 5961-01-111-7739
Part Details | TRANSISTOR
5961-01-111-7739 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6579, RELEASE6663, 0N540086, 2N6579, 5961-01-111-7739, 01-111-7739, 5961011117739, 011117739
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 23, 1981 | 01-111-7739 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-111-7739
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6579 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6663 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 0N540086 | 98230 | NATIONAL SECURITY AGENCY |
| 2N6579 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-111-7739
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CA+350.0 MAXIMUM AND CAM450.0 MAXIMUM AND CBA9.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC10.00 AMPERES NOMINAL AND AACAB15.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF125.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.400 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.785 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |