NSN 5961-01-112-1827
Part Details | TRANSISTOR
5961-01-112-1827 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SS25205501, SS25205-501, SS25205501, SS25205-501, 550030005, 55-003-0005, 2N6331, 2N6331, SE27750053, SE27750-053, 5961-01-112-1827, 01-112-1827, 5961011121827, 011121827
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 29, 1981 | 01-112-1827 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-112-1827
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SS25205-501 | K3743 | BAE SYSTEMS GLOBAL COMBAT SYSTEMSLIMITED |
| SS25205-501 | K6894 | BAE SYSTEMS RO DEFENCE |
| 55-003-0005 | K7810 | ROCC COMPUTERS LTD |
| 2N6331 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N6331 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| SE27750-053 | K0216 | THALES OPTRONICS LIMITED |
Technical Data | NSN 5961-01-112-1827
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBY100.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC30.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG200.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.375 INCHES NOMINAL |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |