NSN 5961-01-112-5315
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-112-5315 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 78800431179, 78-8004-3117-9, 1N4148, 78800431179, 78-8004-3117-9, JAN1N4148, 1N4148JAN, 1N4148, 5961-01-112-5315, 01-112-5315, 5961011125315, 011125315
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 06, 1981 | 01-112-5315 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-112-5315
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 78-8004-3117-9 | 76381 | 3M COMPANYDBA 3M |
| 1N4148 | 12969 | MICRO USPD INC |
| 78-8004-3117-9 | 94862 | MINNESOTA MINING AND MFG CODOCUMENT SYSTEMS DIV |
| JAN1N4148 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N4148JAN | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 1N4148 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-112-5315
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CED75.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF10.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | D0-35 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | C-5A CPT AF37 57230 |