NSN 5961-01-112-6242
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-112-6242 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: UDZ7807, UDZ1007, 9114771, 911477-1, 9114771, 911477-1, 9114771, 911477-1, 5961-01-112-6242, 01-112-6242, 5961011126242, 011126242
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 07, 1981 | 01-112-6242 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-112-6242
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| UDZ7807 | 12969 | MICRO USPD INC |
| UDZ1007 | 12969 | MICRO USPD INC |
| 911477-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 911477-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 911477-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-112-6242
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET7.5 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAS325.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF6.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.700 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 49956-911477 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |