NSN 5961-01-112-8087
Part Details | TRANSISTOR
5961-01-112-8087 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 5200426, 5200-426, STI701, STI-701, 91554866, 5961-01-112-8087, 01-112-8087, 5961011128087, 011128087
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 10, 1981 | 01-112-8087 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-112-8087
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5200-426 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| STI-701 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
| 91554866 | F0052 | THALES SYSTEMES AEROPORTES SAS |
Technical Data | NSN 5961-01-112-8087
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM800.0 MAXIMUM AND CAQ600.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACBF0.50 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF50.0 WATTS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |