NSN 5961-01-113-4165
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-113-4165 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: T2800M, 5609, NTE5609, BCR8CM12L, BCR8CM-12L, 5961-01-113-4165, 01-113-4165, 5961011134165, 011134165
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 22, 1981 | 01-113-4165 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-113-4165
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| T2800M | 18714 | HARRIS CORPFINDLAY OPNS |
| 5609 | 7T184 | NTE ELECTRONICS INCSUB OF SOLID STATE INC |
| NTE5609 | 7T184 | NTE ELECTRONICS INCSUB OF SOLID STATE INC |
| BCR8CM-12L | 66844 | POWEREX, INC |
Technical Data | NSN 5961-01-113-4165
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBJ600.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACDW100.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAE16.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZM100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.575 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| OVERALL WIDTH | 0.395 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |