NSN 5961-01-115-5000
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-115-5000 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: FBP00048, FBP-00-048, FBP00048, FBP-00-048, 5961-01-115-5000, 01-115-5000, 5961011155000, 011155000
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 08, 1981 | 01-115-5000 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-115-5000
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FBP-00-048 | 31338 | SEMITRONICS CORP |
| FBP-00-048 | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
Technical Data | NSN 5961-01-115-5000
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BED200.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACDG40.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN135.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 1.646 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.562 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |