NSN 5961-01-117-8265
Part Details | TRANSISTOR
5961-01-117-8265 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 9137792, 913779-2, 72032, 5961-01-117-8265, 01-117-8265, 5961011178265, 011178265
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 23, 1981 | 01-117-8265 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-117-8265
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 913779-2 | 80249 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 72032 | 32421 | MICROWAVE SEMICONDUCTOR CORP |
Technical Data | NSN 5961-01-117-8265
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM65.0 MAXIMUM AND CAS65.0 MAXIMUM AND CBA3.5 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | ATCAG160.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 2 FLANGE |
| OVERALL LENGTH | 0.405 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| END ITEM IDENTIFICATION | AN/APX-76B |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | EXTERNAL SURFACES GOLD |