NSN 5961-01-123-0785
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-123-0785 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: RELEASE 2663, 1N647, SG174, 4610495, 461049-5, HR1033S, 1N6471, 1N647-1, MILPRF19500240, MIL-PRF-19500/240, JTX1N6471, JTX1N647-1, JAN1N6471, JAN1N647-1, JAN1N647, JANTXV1N6471, JANTXV1N647-1, IN647, MS246938, MS24693-8, 10133230, 1N302, 1N302, 322M0315P001, 322M0315P001, 322M0315P001, 3532856000, 353-2856-000, 3532596001, 353-2596-001, 3532596001, 353-2596-001, 1N646, 1N647, PS656, 9175464, 5961-01-123-0785, 01-123-0785, 5961011230785, 011230785
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 05, 1981 | 01-123-0785 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-123-0785
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RELEASE 2663 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N647 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| SG174 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 461049-5 | 94580 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| HR1033S | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
| 1N647-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/240 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JTX1N647-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N647-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N647 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTXV1N647-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| IN647 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MS24693-8 | 96906 | MILITARY STANDARDSPROMULGATED BY MILITARY DEPARTMENTS |
| 10133230 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 1N302 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N302 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 322M0315P001 | 94144 | RAYTHEON COMPANYDBA RAYTHEON |
| 322M0315P001 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 322M0315P001 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 353-2856-000 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 353-2596-001 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 353-2596-001 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
| 1N646 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 1N647 | 24046 | TRANSITRON ELECTRONIC CORPHDQS |
| PS656 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
| 9175464 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-123-0785
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBF480.0 MAXIMUM AND CDE400.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCF5.00 AMPERES NOMINAL AND BACCG400.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 240 GOVERNMENT SPECIFICATION |
| END ITEM IDENTIFICATION | BLANK SYSTEM |