NSN 5961-01-123-2432
Part Details | TRANSISTOR
5961-01-123-2432 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 6010351001, 6010351-001, CD1985, 5961-01-123-2432, 01-123-2432, 5961011232432, 011232432
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 09, 1981 | 01-123-2432 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-123-2432
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 6010351-001 | 12436 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| CD1985 | 50155 | VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV |
Technical Data | NSN 5961-01-123-2432
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAE60.0 MAXIMUM AND CBM4.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC10.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT AND THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNC |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL DIAMETER | 0.300 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | MINIMUM VOLTAGE |
| TEST DATA DOCUMENT | 12436-6010351 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | 4920-01-054-8588 E/I FSCM 81755 |