NSN 5961-01-123-2982
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-123-2982 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: SZG20272H1B, DT800702B, 9254631B, 925463-1B, 5961-01-123-2982, 01-123-2982, 5961011232982, 011232982
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 10, 1981 | 01-123-2982 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-123-2982
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SZG20272H1B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| DT800702B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 925463-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-123-2982
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET6.2 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAS7.50 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF250.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 82577-925463 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | RADAR E/I FSCM 76301 |