NSN 5961-01-123-2991

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-123-2991 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: MA4E209, A2X1645, HSCH0812, HSCH-0812, HSCH3486, HSCH-3486, QSCH3951, QSCH-3951, MX523675, MX5236-75, 88790001001, 8879000100-1, 9252361B, 925236-1B, MX523675, MX5236-75, MA4E209, 5961-01-123-2991, 01-123-2991, 5961011232991, 011232991

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 10, 198101-123-299120589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-123-2991
Part Number Cage Code Manufacturer
MA4E20996341COBHAM ADVANCED ELECTRONIC SOLUTIONSINC.
A2X164521847FEI MICROWAVE INC
HSCH-081254893HEWLETT-PACKARD CO COMMUNICATIONSCOMPONENTS/AVANTEK DIV
HSCH-348698734HEWLETT-PACKARD CO MFG DIV
QSCH-395128480HEWLETT-PACKARD COMPANYDBA HP
MX5236-750EFF4MICROMETRICS INC
8879000100-157057NAVCOM DEFENSE ELECTRONICS, INC.
925236-1B82577RAYTHEON COMPANYDBA RAYTHEON
MX5236-753BBY6SEMI-GENERAL, INC.
MA4E209DG438SEMIC RF ELECTRONIC GMBH
Technical Data | NSN 5961-01-123-2991
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCBG2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAF30.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICBZCAF100.0 MILLIWATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZL125.0 DEG CELSIUS
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MAXIMUM
OVERALL DIAMETER0.076 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
END ITEM IDENTIFICATIONRADAR 76301