NSN 5961-01-123-3132
Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-01-123-3132 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: 9252151B, 925215-1B, SENB3111B, SEN-B-311-1B, SA7493, 5961-01-123-3132, 01-123-3132, 5961011233132, 011233132
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 10, 1981 | 01-123-3132 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
CENTER TAP 1 PHASE
Cross Reference | NSN 5961-01-123-3132
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 925215-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| SEN-B-311-1B | 13409 | RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR |
| SA7493 | 14099 | SEMTECH CORPORATION |
Technical Data | NSN 5961-01-123-3132
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 REVERSE VOLTAGE, INSTANTANEOUS |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | ACG20.00 AMPERES |
| MOUNTING METHOD | THREADED STUD |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 THREADED STUD |
| CIRCUIT CONNECTION STYLE DESIGNATOR | CENTER TAP 1 PHASE |
| OPERATING TEMP RANGE | -55.0 TO +150.0 DEG CELSIUS |
| OVERALL LENGTH | 1.230 INCHES NOMINAL |