NSN 5961-01-123-3133

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-123-3133 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 9252152B, 925215-2B, SENB3112B, SEN-B-311-2B, SA7508, SA7508, 5961-01-123-3133, 01-123-3133, 5961011233133, 011233133

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 10, 198101-123-313362108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

CENTER TAP 1 PHASE

Cross Reference | NSN 5961-01-123-3133
Part Number Cage Code Manufacturer
925215-2B82577RAYTHEON COMPANYDBA RAYTHEON
SEN-B-311-2B13409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SA750814099SEMTECH CORPORATION
SA7508SH879SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY
Technical Data | NSN 5961-01-123-3133
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC150.0 REVERSE VOLTAGE, INSTANTANEOUS
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG20.00 AMPERES
MOUNTING METHOD THREADED STUD
TERMINAL TYPE AND QUANTITY2 TAB, SOLDER LUG AND 1 THREADED STUD
CIRCUIT CONNECTION STYLE DESIGNATOR CENTER TAP 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH1.230 INCHES NOMINAL