NSN 5961-01-123-3137

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-123-3137 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 655959, 655-959, 925111502B, 925111-502B, SENB308502B, SEN-B-308-502B, SA7707, 5961-01-123-3137, 01-123-3137, 5961011233137, 011233137

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 10, 198101-123-313762108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-123-3137
Part Number Cage Code Manufacturer
655-95912969MICRO USPD INC
925111-502B82577RAYTHEON COMPANYDBA RAYTHEON
SEN-B-308-502B13409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SA770714099SEMTECH CORPORATION
Technical Data | NSN 5961-01-123-3137
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 REVERSE VOLTAGE, DC
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG32.00 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 QUICK DISCONNECT, MALE
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH2.000 INCHES NOMINAL
OVERALL WIDTH1.000 INCHES NOMINAL
OVERALL HEIGHT1.000 INCHES NOMINAL